vishay BC556 to bc558 document number 85133 rev. 1.2, 19-aug-04 vishay semiconductors www.vishay.com 1 2 1 3 e b c 18979 1 2 3 small signal transistors (pnp) features ? pnp silicon epitaxial planar transistors for switching and af amplifier applications. these transistors are subdivided into three groups a, b, and c according to their current gain. the type BC556 is available in groups a and b, how- ever, the types bc557 and bc558 can be supplied in all three groups. as complementary types, the npn transistors bc546...bc548 are recom- mended. on special request, these transistors are also manufactured in the pin configuration to-18. mechanical data case: to-92 plastic case weight: approx. 177 mg packaging codes/options: bulk / 5 k per container 20 k/box tap / 4 k per ammopack 20 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. parameter test condition part symbol value unit collector - base voltage BC556 - v cbo 80 v bc557 - v cbo 50 v bc558 - v cbo 30 v - v cbo 30 v collector - emitter voltage BC556 - v ces 80 v bc557 - v ces 50 v bc558 - v ces 30 v - v ces 30 v - v ceo 65 v - v ceo 45 v - v ceo 30 v - v ceo 30 v emitter - base voltage - v ebo 5v collector current - i c 100 ma peak colector current - i cm 200 ma peak emitter current - i em 200 ma power dissipation t amb = 25 c p tot 500 1) mw peak base current - i bm 200 ma
www.vishay.com 2 document number 85133 rev. 1.2, 19-aug-04 vishay BC556 to bc558 vishay semiconductors maximum thermal resistance 1) valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. electrical dc characteristics parameter test condition symbol value unit thermal resistance junction to ambient air r ja 250 1) c/w junction temperature t j 150 c storage temperature range t s - 65 to + 150 c parameter test condition part symbol min ty p max unit small signal current gain (current gain group a) - v ce = 5 v, - i c = 2 ma, f = 1 khz h fe 220 small signal current gain (current gain group b) - v ce = 5 v, - i c = 2 ma, f = 1 khz h fe 330 small signal current gain (current gain group c) - v ce = 5 v, - i c = 2 ma, f = 1 khz h fe 600 input impedance (current gain group a) - v ce = 5 v, - i c = 2 ma, f = 1 khz h ie 1.6 2.7 4.5 k ? input impedance (current gain group b) - v ce = 5 v, - i c = 2 ma, f = 1 khz h ie 3.2 4.5 8.5 k ? input impedance (current gain group c) - v ce = 5 v, - i c = 2 ma, f = 1 khz h ie 68.715k ? output admittance (current gain group a) - v ce = 5 v, - i c = 2 ma, f = 1 khz h oe 18 30 s output admittance (current gain group b) - v ce = 5 v, - i c = 2 ma, f = 1 khz h oe 30 60 s output admittance (current gain group c) - v ce = 5 v, - i c = 2 ma, f = 1 khz h oe 60 110 s reverse voltage transfer ratio (current gain group a) - v ce = 5 v, - i c = 2 ma, f = 1 khz h re 1.5 x 10 -4 reverse voltage transfer ratio (current gain group b) - v ce = 5 v, - i c = 2 ma, f = 1 khz h re 2 x 10 -4 reverse voltage transfer ratio (current gain group c) - v ce = 5 v, - i c = 2 ma, f = 1 khz h re 3 x 10 -4 dc current gain (current gain group a) - v ce = 5 v, - i c = 10 ah fe 90 dc current gain (current gain group b) - v ce = 5 v, - i c = 10 ah fe 150 dc current gain (current gain group c) - v ce = 5 v, - i c = 10 ah fe 270 dc current gain (current gain group a) - v ce = 5 v, - i c = 2 ma h fe 110 180 220 dc current gain (current gain group b) - v ce = 5 v, - i c = 2 ma h fe 200 290 450 dc current gain (current gain group c) - v ce = 5 v, - i c = 2 ma h fe 420 500 800 dc current gain (current gain group a) - v ce = 5 v, - i c = 100 ma h fe 120 dc current gain (current gain group b) - v ce = 5 v, - i c = 100 ma h fe 200 dc current gain (current gain group c) - v ce = 5 v, - i c = 100 ma h fe 400 collector saturation voltage - i c = 10 ma, - i b = 0.5 ma v cesat 80 300 mv - i c = 100 ma, - i b = 5 ma v cesat 250 650 mv
vishay BC556 to bc558 document number 85133 rev. 1.2, 19-aug-04 vishay semiconductors www.vishay.com 3 electrical ac characteristics typical characteristics (t amb = 25 c unless otherwise specified) base saturation voltage - i c = 10 ma, - i b = 0.5 ma v besat 700 mv - i c = 100 ma, - i b = 5 ma v besat 900 mv base - emiter voltage - v ce = 5 v, - i c = 2 ma v be 600 660 700 mv - v ce = 5 v, - i c = 10 ma v be 800 mv collector-emitter cut-off current - v ce = 80 v BC556 i ces 0.2 15 na - v ce = 50 v bc557 i ces 0.2 15 na - v ce = 30 v bc558 i ces 0.2 15 na - v ce = 80 v, t j = 125 c BC556 i ces 4 a - v ce = 50 v, t j = 125 c bc557 i ces 4 a - v ce = 30 v, t j = 125 c bc558 i ces 4 a bc559 i ces 4 a parameter test condition part symbol min ty p max unit gain bandwidth product - v ce = 5 v, - i c = 10 ma, f = 100 mhz f t 150 mhz collector - base capacitance - v cb = 10 v, f = 1 mhz c cbo 6pf noise figure - v ce = 5 v, - i c = 200 a, r g = 2 k ? , f = 1 khz, ? f = 200 hz BC556 f 2 10 db bc557 f 2 10 db bc558 f 2 10 db bc559 f 1 4 db - v ce = 5 v, - i c = 200 a, r g = 2 k ? , f = (30 to 15000) hz bc559 f 1.2 4 db parameter test condition part symbol min ty p max unit figure 1. admissible power dissipation vs. ambient temperature mw 500 400 300 200 100 0 0 100 200 c p tot t amb 19181 figure 2. pulse thermal resistance vs. pulse duration 19182 c/w 10 3 2 -1 10 10 10 1 1 2 10 10 10 10 10 10 10 10 -1 -2 -3 -4 -5 -6 r tha t p t p t p p i t t = s 0.2 0.1 0.05 0.02 0.01 0.005 =0
www.vishay.com 4 document number 85133 rev. 1.2, 19-aug-04 vishay BC556 to bc558 vishay semiconductors figure 3. dc current gain vs. collector current figure 4. collector-base cutoff curent vs. ambient temperature figure 5. collector current vs. base-emitter voltage 10 3 2 10 10 1 1 2 10 10 10 10 -1 -2 h fe -i c 19183 -v = 5 v ce 100 c -50c t=25c amb 2 -1 10 10 10 1 10 3 10 4 na 0 100 200 c test voltage - v : equal to the given maximum value - v cbo ceo typical maximum 19184 -i cbo t j 2 -1 10 10 10 1 ma 0 0.5 1v -i c -v be -v = 5 v ce 25 c -50 c t = 100 c amb 19185 figure 6. collector base capacitance, emitter base capacitance vs. bias voltage figure 7. collector saturation voltage vs. collector current figure 8. relative h-parameters vs. collector current pf 20 10 0 0.1 1 10 v t=25c amb c ebo c cbo c ebo c cbo -v ebo -v cbo, 19186 25 c -50 c t = 100 c amb -i /-i = 20 c b -v cesat -i c 0.5 0.4 0.3 0.2 0.1 0 v 1 2 10 10 10 -1 ma 19187 10 1 10 1 -i c 10 ma 10 2 -1 10 -1 h (-i = 2 ma) e c h (-i ) e c h ie h oe h re h fe -v =5v ce t=25c amb 19188
vishay BC556 to bc558 document number 85133 rev. 1.2, 19-aug-04 vishay semiconductors www.vishay.com 5 figure 9. gain-bandwidth product vs. collector current 0.1 1 10 100 ma 10 10 10 2 3 mhz f r -i c 19189 t=25c amb -v =10v ce 5v 2v
www.vishay.com 6 document number 85133 rev. 1.2, 19-aug-04 vishay BC556 to bc558 vishay semiconductors packaging for radial taping 1 12.7 1 0.3 0.2 1 -0.5 18 12 0.3 9 0.5 4 0.2 12.7 0.2 6.3 0.7 5.08 0.7 2.54 + 0.6 - 0.1 measure limit over 20 index - holes: 1 "h" vers. dim. "h" fsz 27 0.5 0.9 max 2 18787
vishay BC556 to bc558 document number 85133 rev. 1.2, 19-aug-04 vishay semiconductors www.vishay.com 7 package dimensions in mm (inches) bottom view 4.6 (0.181) 3.6 (0.142) min. 12.5 (0.492) 4.6 (0.181) max. 0.55 (0.022) 2.5 (0.098) 18776
www.vishay.com 8 document number 85133 rev. 1.2, 19-aug-04 vishay BC556 to bc558 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
|
